semiconductor group 1 pnp silicon darlington transistors bc 876 bc 880 5.91 maximum ratings type ordering code marking package 1) pin configuration bc 876 bc 878 bc 880 c62702-c943 c62702-c942 C62702-C941 C to-92 e c b 1 2 3 1) for detailed information see chapter package outlines. 2) if transistors with max. 4 mm lead length are fixed on pcbs with a min. 10 mm 10 mm large copper area for the collector terminal, r thja = 125 k/w and thus p tot max = 1 w at t a = 25 ?c. 3) mounted on al heat sink 15 mm 25 mm 0.5 mm. parameter symbol values unit collector-emitter voltage v ce0 v peak collector current i cm collector current i c a junction temperature t j ?c total power dissipation, t c = 90 ?c 2) p tot w storage temperature range t stg collector-base voltage v cb0 thermal resistance junction - ambient 2) r th ja 156 k/w 1 2 0.8 (1) 150 C 65 + 150 emitter-base voltage v eb0 base current i b ma 100 45 60 60 80 bc 876 bc 878 peak base current i bm 200 80 100 bc 880 5 junction - case 3) r th jc 75 l high current gain l high collector current l low collector-emitter saturation voltage l complementary types: bc 875, bc 877, bc 879 (npn)
semiconductor group 2 bc 876 bc 880 electrical characteristics at t a = 25 ?c, unless otherwise specified. dc current gain i c = 150 ma; v ce = 10 v 1) i c = 500 ma; v ce = 10 v 1) v collector-emitter breakdown voltage i c = 50 ma bc 876 bc 878 bc 880 v (br)ce0 45 60 80 C C C C C C na m a collector cutoff current v cb = v cbmax v cb = v cbmax , t a = 150 ?c i cb0 C C C C 100 20 unit values parameter symbol min. typ. max. dc characteristics collector-base breakdown voltage i c = 100 m a bc 876 bc 878 bc 880 v (br)cb0 60 80 100 C C C C C C emitter-base breakdown voltage, i e = 100 m a v (br)eb0 5CC C h fe 1000 2000 C C C C base-emitter saturation voltage 1) i c = 1000 ma; i b = 1 ma v besat C C 2.2 na emitter cutoff current, v eb = 4 v i eb0 C C 100 mhz transition frequency i c = 200 ma, v ce = 5 v, f = 20 mhz f t C 150 C ac characteristics v collector-emitter saturation voltage 1) i c = 500 ma, i b = 0.5 ma i c = 1000 ma, i b = 1 ma v cesat C C C C 1.3 1.8 collector cutoff current v ce = 0.5 v cemax i ce0 C C 500 1) pulse test: t 300 m s, d 2%.
semiconductor group 3 bc 876 bc 880 total power dissipation p tot = f ( t a ; t c ) permissible pulse load r thja = f ( t p ) collector cutoff current i cb0 = f ( t a ) v cb = 100 v dc current gain h fe = f ( t a ) v ce = 10 v
semiconductor group 4 bc 876 bc 880 dc current gain h fe = f ( i c ) v ce = 10 v, t a = 25 ?c collector-emitter saturation voltage v cesat = f ( i c ) parameter = i b , t a = 25 ?c transition frequency f t = f ( i c ) v ce = 5 v, f = 20 mhz base-emitter saturation voltage v besat = f ( i c ) parameter = i b , t a = 25 ?c
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